N/A

-

表面贴装

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

Diodes Incorporated

270mA

3000

Diodes Incorporated

Diodes Incorporated

Details

Tape & Reel (TR)

活跃

270mA (Ta)

2

U-DFN2020

Enhancement

MSL 1 - Unlimited

-

N通道

-55°C ~ 150°C (TJ)

切割胶带

-

MOSFETs

6

700mW (Ta)

2 N-Channel (Dual)

6Ohm @ 190mA, 10V

2V @ 1mA

41pF @ 50V

1.2nC @ 10V

100V

MOSFET

N

Standard

MOSFET

N/A

-

表面贴装

8-PowerTDFN

PowerDI5060-8 (Type UXD)

Diodes Incorporated

Diodes Incorporated

Diodes Incorporated

Details

Tape & Reel (TR)

活跃

9.4A (Ta), 36.3A (Tc)

AEC-Q101

N通道

36.3A

2500

-55°C ~ 175°C (TJ)

Reel

Automotive, AEC-Q101

MOSFETs

2.6W (Ta), 39.5W (Tc)

2 N-Channel (Dual)

20mOhm @ 10A, 10V

2.5V @ 250μA

825pF @ 30V

14.3nC @ 10V

60V

MOSFET

N通道

Standard

MOSFET

N/A

-

表面贴装

6-TSSOP, SC-88, SOT-363

SOT-363

Diodes Incorporated

活跃

630mA (Ta)

3000

Diodes Incorporated

Diodes Incorporated

Tape & Reel (TR)

-55°C ~ 150°C (TJ)

-

MOSFETs

370mW (Ta)

2 P-Channel (Dual)

750mOhm @ 430mA, 4.5V

1V @ 250μA

49pF @ 16V

0.7nC @ 4.5V

20V

MOSFET

Standard

MOSFET

N/A

-

表面贴装

6-WDFN Exposed Pad

6-HWSON (3x3)

Renesas

Obsolete

2A (Ta)

Bulk

150°C

-

1.5W (Ta)

2 N-Channel (Dual)

225mOhm @ 1A, 4.5V

1.4V @ 1mA

200pF @ 10V

2.4nC @ 4.5V

60V

Standard

N/A

-

底座安装

Module

-

微芯片技术

31 mOhms

50 ns

79 A

Bulk

活跃

79A

MSCSM120

1200 V

1.2 kV

30 ns

1.8 V

310 W

N-Channel

+ 175 C

- 10 V, + 25 V

- 55 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

-55°C ~ 175°C (TJ)

-

Asymmetrical Bridge SiC MOSFET Power Module

Discrete Semiconductor Modules

SiC

不对称桥

310W

2 N-Channel (Dual) Asymmetrical

31mOhm @ 40A, 20V

2.8V @ 1mA

3020pF @ 1000V

232nC @ 20V

30 ns

1200V

Discrete Semiconductor Modules

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 30 A

Discrete Semiconductor Modules

N/A

-

表面贴装

6-TSSOP, SC-88, SOT-363

SOT-363

Diodes Incorporated

Diodes Incorporated

Diodes Incorporated

Tape & Reel (TR)

活跃

460mA (Ta)

1

SOT-363

Enhancement

-

AEC-Q101

N通道

460mA

3000

-55°C ~ 150°C (TJ)

Automotive, AEC-Q101

MOSFETs

Si

3

400mW (Ta)

2 N-Channel (Dual)

1.6Ohm @ 500mA, 10V

1.5V @ 250μA

49.5pF @ 25V

1.4nC @ 10V

50V

MOSFET

N

Standard

MOSFET

3000 In Stock

-

表面贴装

8-SMD, Flat Lead

TSMT8

Enhancement

±20(V)

-55C to 150C

TSMT

Military

30(V)

9(A)

Rohm Semiconductor

MSL 1 - Unlimited

-

N通道

9A

30 V

8 ns

2.5 V

2.6 W

+ 150 C

- 20 V, + 20 V

- 55 C

3000

SMD/SMT

ROHM 半导体

ROHM 半导体

15.5 nC

16 mOhms

Details

33 ns

9 A

活跃

9A (Ta)

表面贴装

无

2

150°C (TJ)

卷带

-

小信号

MOSFETs

Si

8

N

Dual

2 Channel

2.6(W)

1.5W (Ta)

2 N-Channel (Dual)

16mOhm @ 9A, 10V

2.5V @ 1mA

640pF @ 15V

15.5nC @ 10V

19 ns

30V

MOSFET

N通道

Standard

MOSFET

N/A

-

表面贴装

8-PowerTDFN

PowerDI5060-8 (Type UXD)

Diodes Incorporated

9.4A (Ta), 36.3A (Tc)

2500

Diodes Incorporated

Diodes Incorporated

Details

Tape & Reel (TR)

活跃

-55°C ~ 175°C (TJ)

Reel

-

MOSFETs

2.6W (Ta), 39.5W (Tc)

2 N-Channel (Dual)

20mOhm @ 10A, 10V

2.5V @ 250μA

825pF @ 30V

14.3nC @ 10V

60V

MOSFET

Standard

MOSFET

N/A

-

底座安装

Module

-

微芯片技术

495A (Tc)

MSCSM120

1

Microchip

微芯片技术

Bulk

活跃

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

2031W (Tc)

2 N-Channel (Dual) Common Source

5.2mOhm @ 240A, 20V

2.8V @ 6mA

18100pF @ 1000V

1392nC @ 20V

1200V (1.2kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

N/A

-

底座安装

Module

SP6C

微芯片技术

活跃

349A (Tc)

1

Microchip

微芯片技术

Bulk

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

966W (Tc)

4 N-Channel (Three Level Inverter)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

13500pF @ 700V

645nC @ 20V

700V

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

N/A

-

底座安装

Module

SP6C

微芯片技术

179A (Tc)

MSCSM170

1

Microchip

微芯片技术

Bulk

活跃

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

843W (Tc)

4 N-Channel (Three Level Inverter)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

9900pF @ 1000V

534nC @ 20V

1700V (1.7kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

N/A

-

底座安装

Module

SP3F

微芯片技术

55A (Tc)

MSCSM120

1

Microchip

微芯片技术

Bulk

活跃

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

245W (Tc)

4 N-Channel (Three Level Inverter)

50mOhm @ 40A, 20V

2.7V @ 1mA

1990pF @ 1000V

137nC @ 20V

1200V (1.2kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

N/A

-

底座安装

Module

SP3F

微芯片技术

活跃

124A (Tc)

1

Microchip

微芯片技术

Bulk

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

365W (Tc)

4 N-Channel (Three Level Inverter)

19mOhm @ 40A, 20V

2.4V @ 4mA

4500pF @ 700V

215nC @ 20V

700V

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

1220 In Stock

-

表面贴装

8-SOIC (0.154", 3.90mm Width)

8-SOP

Rohm Semiconductor

18 mOhms

15 nC

ROHM 半导体

ROHM 半导体

SMD/SMT

2500

- 55 C

- 20 V, + 20 V

+ 150 C

2 W

2.5 V

10 ns

30 V

活跃

9A (Ta), 7A (Ta)

2

SOP

Enhancement

-

AEC-Q101

N and P Channel

9A

9 A, 7 A

55 ns

Details

150°C (TJ)

切割胶带

-

MOSFETs

Si

8

Dual

2 Channel

1.4W (Ta)

N and P-Channel

18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V

2.5V @ 1mA

1190pF @ 10V, 2600pF @ 10V

15nC @ 5V, 25nC @ 5V

15 ns

30V

MOSFET

1 N-Channel, 1 P-Channel

N, P

Standard

MOSFET

2448 In Stock

-

表面贴装

8-SOIC (0.154", 3.90mm Width)

8-SOP

Rohm Semiconductor

2 W

+ 150 C

- 20 V, + 20 V

- 55 C

2500

SMD/SMT

ROHM 半导体

ROHM 半导体

9.6 nC

46 mOhms

Details

42 ns

4.5 A

活跃

4.5A (Ta)

2

SOP

Enhancement

-

AEC-Q101

N通道

4.5A

45 V

12 ns

2.5 V

150°C (TJ)

切割胶带

SP8K22

MOSFETs

Si

8

Dual

2 Channel

1.4W (Ta)

2 N-Channel (Dual)

46mOhm @ 4.5A, 10V

2.5V @ 1mA

550pF @ 10V

9.6nC @ 5V

18 ns

45V

MOSFET

2 N-Channel

N

Standard

MOSFET

N/A

-

表面贴装

8-PowerTDFN

8-PDFNU (5x6)

Taiwan Semiconductor Corporation

24 A

活跃

5A (Ta), 24A (Tc)

60 V

2.5 V

40 W

N-Channel

+ 150 C

- 20 V, + 20 V

- 55 C

2500

SMD/SMT

Enhancement

TSM300NB06LDCR

台湾半导体

台湾半导体

9 nC

30 mOhms

Details

-55°C ~ 150°C (TJ)

MouseReel

-

MOSFETs

Si

2 Channel

2W (Ta), 40W (Tc)

2 N-Channel (Dual)

30mOhm @ 5A, 10V

2.5V @ 250μA

966pF @ 30V

17nC @ 10V

60V

MOSFET

逻辑电平门

MOSFET

MOSFET

N/A

-

底座安装

Module

-

onsemi

活跃

51A (Tc)

28

onsemi

onsemi

Tray

-40°C ~ 150°C (TJ)

Tray

-

Discrete Semiconductor Modules

119W (Tj)

2 N-Channel (Dual) Common Source

30mOhm @ 50A, 20V

4.3V @ 20mA

2420pF @ 800V

213.5nC @ 20V

1200V (1.2kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

Discrete Semiconductor Modules

N/A

-

底座安装

Module

22-PIM (33.8x42.5)

onsemi

28

onsemi

onsemi

Tray

活跃

51A (Tc)

51A

F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free and Halide-Free)

-40°C ~ 175°C (TJ)

-

Discrete Semiconductor Modules

119W

119W (Tj)

4 N-Channel (Half Bridge)

30mOhm @ 50A, 20V

4.3V @ 20mA

2420pF @ 800V

213.5nC @ 20V

1200V (1.2kV)

Discrete Semiconductor Modules

Four N Channel

Standard

Discrete Semiconductor Modules

N/A

-

底座安装

Module

-

微芯片技术

173 A

Bulk

活跃

173A (Tc)

1200 V

30 ns

1.8 V

745 W

N-Channel

+ 175 C

- 10 V, 23 V

- 40 C

1

螺钉安装

Microchip

微芯片技术

16 mOhms

Details

50 ns

-40°C ~ 175°C (TJ)

-

Full Bridge SiC MOSFET Power Module

Discrete Semiconductor Modules

SiC

全桥

745W (Tc)

4 N-Channel (Full Bridge)

16mOhm @ 80A, 20V

2.8V @ 6mA

6040pF @ 1000V

464nC @ 20V

30 ns

1200V (1.2kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

底座安装

Module

-

微芯片技术

689 A

Bulk

活跃

689A (Tc)

700 V

66 ns

1.9 V

1.882 kW

N-Channel

+ 175 C

- 10 V, 23 V

- 40 C

1

螺钉安装

Microchip

微芯片技术

3.2 mOhms

Details

155 ns

-40°C ~ 175°C (TJ)

-

Phase Leg SiC MOSFET Power

Discrete Semiconductor Modules

SiC

Dual

1.882kW (Tc)

2 N Channel (Phase Leg)

3.2mOhm @ 240A, 20V

2.4V @ 24mA

27000pF @ 700V

1290nC @ 20V

56 ns

700V

Discrete Semiconductor Modules

Silicon Carbide (SiC)

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

底座安装

Module

-

微芯片技术

689 A

Bulk

活跃

689A (Tc)

700 V

78 ns

1.9 V

1.882 kW

N-Channel

+ 175 C

- 10 V, 23 V

- 40 C

1

螺钉安装

Microchip

微芯片技术

3.2 mOhms

Details

214 ns

-40°C ~ 175°C (TJ)

-

Phase Leg SiC MOSFET Power Module

Discrete Semiconductor Modules

SiC

Dual

1.882kW (Tc)

2 N Channel (Phase Leg)

3.2mOhm @ 240A, 20V

2.4V @ 24mA

27000pF @ 700V

1290nC @ 20V

125 ns

700V

Discrete Semiconductor Modules

Silicon Carbide (SiC)

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

底座安装

Module

-

微芯片技术

79 A

Bulk

活跃

79A

1200 V

30 ns

1.8 V

310 W

N-Channel

+ 175 C

- 10 V, 23 V

- 55 C

1

螺钉安装

Microchip

微芯片技术

31 mOhms

Details

50 ns

-55°C ~ 175°C (TJ)

-

MOSFET Power Module

Discrete Semiconductor Modules

SiC

Double Dual Common Source

310W

4 N-Channel, Common Source

31mOhm @ 40A, 20V

2.8V @ 3mA

3020pF @ 1000V

232nC @ 20V

30 ns

1200V (1.2kV)

Discrete Semiconductor Modules

Silicon Carbide (SiC)

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

表面贴装

8-PowerWDFN

8-WDFN (3x3)

onsemi

活跃

Tape & Reel (TR)

3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)

-55°C ~ 150°C (TJ)

-

1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)

N and P-Channel

70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V

3V @ 24μA, 4V @ 40μA

252pF @ 50V, 256pF @ 50V

5.6nC @ 10V, 7.3nC @ 10V

100V

Standard

N/A

-

表面贴装

8-PowerVDFN

PowerDI3333-8 (Type UXD)

Diodes Incorporated

Diodes Incorporated

Diodes Incorporated

Details

Tape & Reel (TR)

活跃

10.2A (Ta), 27.5A (Tc)

AEC-Q101

N通道

27.5A

3000

-55°C ~ 175°C (TJ)

Reel

Automotive, AEC-Q101

MOSFETs

1.16W (Ta)

2 N-Channel (Dual)

15mOhm @ 20A, 10V

3V @ 250μA

750pF @ 20V

11.2nC @ 10V

40V

MOSFET

N通道

Standard

MOSFET

N/A

-

表面贴装

6-SMD, No Lead

X3-DSN2718-6

Diodes Incorporated

3000

Diodes Incorporated

Diodes Incorporated

Tape & Reel (TR)

活跃

16.5A (Ta)

MSL 1 - Unlimited

-

N通道

16.5A

-55°C ~ 150°C (TJ)

-

MOSFETs

Si

1W

2 N-Channel (Dual) Common Source

5.8mOhm @ 3A, 4.5V

1.3V @ 1mA

2360pF @ 6V

35.2nC @ 4.5V

14V

MOSFET

N通道

-

MOSFET